High rejection self-oscillating up-conversion mixer for fifth-generation communications

<span lang="EN-US">This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve desired lower sideband (LSB) signal and achieve satisfactory rejection unwanted signals (LO, USB IF). This SOM designed on PH15 process UMS foundry which based 0.15 µm GaAs pHEMT. up-converted from 2 GHz-IF frequency 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed advanced system (ADS) workflow. They show 6.4 dB conversion gain rate 29.7 chip size 3.6 mm<sup>2</sup>.</span>